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PC3Q66Q
PC3Q66Q
s Features
1. High collector-emitter voltage ( VCEO : 80V) 2. Half pitch type ( lead pitch : 1.27mm ) 3. Isolation voltage between input and output ( Viso : 2 500V rms ) 4. Applicable to infrared ray reflow ( 230C for MAX. 30seconds ) 5. High reliability
Mini-flat Package, High Collector-Emitter Voltage Type Half Pitch Photocoupler
s Outline Dimensions
10.3 0.3
16
( Unit : mm )
1.27 0.25
9
Model No.
Primary side mark 0.4 0.1 1 0.1 0.1 2.6 0.2
8 C0.4 Epoxy resin 0.2 0.05
4.4 0.2
5.3 0.3
s Applications
1. Programmable controllers
0.5 + 0.4 - 0.2 7.0 + 0.2 - 0.7
s Package Specifications
Model No. PC3Q66Q Package specifications Taping reel diameter 330mm ( 1 000pcs. )
6 Internal connection diagram
16 15 14 13 12 11 10
9
1 357 Anode 2468 Cathode 9 11 13 15 Emitter
10 12 14 16
1
2
3
4
5
6
7
8
Collector
s Absolute Maximum Ratings
Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Symbol IF I FM VR P V CEO V ECO IC PC P tot V iso T opr T stg T sol
( Ta = 25C )
Rating 50 1 6 70 80 6 50 150 170 2.5 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V V mA mW mW kV rms C C C
Input
Output
Soldering area
*1 Pulse width <=100 s, Duty ratio : 0.001 *2 AC for 1 min., 40 to 60% RH, f = 60Hz *3 For 10seconds
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
0.2mm or more
PC3Q66Q s Electro-optical Characteristics
Parameter Forward current Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Rise time Response time Fall time Symbol VF IR Ct ICEO BV CEO BV ECO IC V CE(sat) R ISO Cf tr tf Conditions IF = 20mA VR = 4V V = 0, f = 1kH Z VCE = 20V, I F = 0 IC = 0.1mA, I F = 0 IE = 10 A, I F = 0 IF = 1mA, V CE = 5V IF = 20mA, I C = 1mA DC500V 40 to 60% RH V = 0, f = 1 MH Z VCE = 2V, I C = 2mA RL = 100 MIN. 80 6 1 5 x 1010 TYP. 1.2 30 0.1 1011 0.6 6 8
( Ta = 25C )
MAX. 1.4 10 250 100 4 0.2 1.0 Unit V A pF nA V V mA V pF s s
Input
Output
Transfer characteristics
Fig. 1 Forward Current vs. Ambient Temperature
60
Fig. 2 Diode Power Dissipation vs. Ambient Temperature
Diode power dissipation P ( mW )
50 Forward current I F ( mA )
100
40
80 70 60 40
30
20
10 0 - 30
20 0 - 30
0
25
5055
75
a
100
125
0
50 55
100
Ambient temperature T
( C )
Ambient temperature T a ( C )
Fig. 3 Collector Power Dissipation vs. Ambient Temperature
200 Collector power dissipation P C ( mW )
Fig. 4 Power Dissipation vs. Ambient Temperature
300
150
Power dissipation P tot ( mW )
250
200 170 150
100
100
50
50 0 - 30
0 - 30
0
25
50
75
a
100 ( C )
125
0
25
50
75
100
Ambient temperature T
Ambient temperature T a ( C )
PC3Q66Q
Fig. 5 Peak Forward Current vs. Duty Ratio
10000 5000 Peak forward current I FM ( mA ) 2000 1000 500 200 100 50 20 10 5
5
Fig. 6 Forward Current vs. Forward Voltage
100 50 Forward current I F ( mA ) 25C 50C 20 75C 10 5 - 25C
Pulse width <=100 s T a = 25C
0C
2 1 0.0
10
-3 2
5
5 10 - 2 2 Duty ratio
10
-1 2
5
1
0.5
1.0 1.5 2.0 Forward voltage V F ( V )
2.5
3.0
Fig. 7 Current Tranfer Ratio vs. Forward Current
500 VCE = 5V T a = 25C Current tranfer ratio CTR ( % ) 400
Fig. 8 Collector Current vs. Collector -emitter Voltage
50 Collector current I C ( mA ) Pc (max) I F = 30mA 20mA T a = 25C
40 10mA 30
300
200
20
5mA
100
10 1mA 0 1 10 Forward current I
F
0 100 ( mA )
0
2
4
6
8
10
Collector-emitter voltage V CE ( V )
Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature
150 I F = 1mA Relative current transfer ratio ( % ) VCE = 5V
Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature
0.16 0.14 Collector-emitter saturation voltage V CE(sat) ( V ) 0.12 0.10 0.08 0.06 0.04 0.02 I F = 20mA I C = 1mA
100
50
0 - 30 0 20 40 60 80 100 Ambient temperature T a ( C )
0.00 - 30
0
20
40
60
a
80
100
Ambient temperature T
( C )
PC3Q66Q
Fig.11 Collector Dark Current vs. Ambient Temperature -5
10
5
Fig.12 Response Time vs. Load Resistance
1000 500 200 100 Response time ( s ) 50 20 10 5 2 1 0.5 0.2 0.1 0.01 td ts tr tf VCE = 2V I C = 2mA T a = 25C
VCE = 20V
10 Collector dark current I CEO ( A)
-6
5
10
-7
5
10 10
-8
5
-9
5
10
- 10
5
10
- 11
- 30
0
20
40
a
60 ( C )
80
100
0.1
1
10
Ambient temperature T
Load resistance RL ( k )
Fig.13 Collector-emitter Saturation Voltage vs. Forward Current
Collector-emitter saturation voltage V CE ( sat ) ( V) 10 T a = 25C
8
I C = 0.5mA 1mA 3mA
6 5mA 7mA 4
2 0 0 2 4 6
F
8 ( mA )
10
Forward current I
q Please refer to the chapter " Precautions for Use "

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